收藏本站
2.4 GHz High-Power, High-Gain Power Amplifier
A Microchip Technology Company
SST12LP15
Not Recommended for New Designs
Pin Assignments
NC
1
16
15
14
13
12 VCC3
Top View
RFIN
RFIN
2
3
(contacts facing down)
11 RFOUT
10 RFOUT
RF and DC GND
NC
4
0
9 Det
5
6
7
8
1277 16-vqfn P1.0
Figure 2: Pin Assignments for 16-contact VQFN
Pin Descriptions
Table 1: Pin Description
Symbol
GND
Pin No.
0
Pin Name
Ground
Type 1
Function
The center pad should be connected to RF ground
with several low inductance, low resistance vias.
NC
RFIN
RFIN
NC
1
2
3
4
No Connection
No Connection
I
I
Unconnected pins.
RF input, DC decoupled
RF input, DC decoupled
Unconnected pins.
VCCb
VREF1
VREF2
Det_ref
Det
RFOUT
RFOUT
VCC3
NC
VCC2
NC
VCC1
5
6
7
8
9
10
11
12
13
14
15
16
Power Supply
Power Supply
No Connection
Power Supply
No Connection
Power Supply
PWR
PWR
PWR
O
O
O
O
PWR
PWR
PWR
Supply voltage for bias circuit
1st and 2nd stage idle current control
3rd stage idle current control
On-chip power detector reference
On-chip power detector
RF output
RF output
Power supply, 3rd stage
Unconnected pins.
Power supply, 2nd stage
Unconnected pins.
Power supply, 1st stage
T1.0 75030
1. I=Input, O=Output
?2011 Silicon Storage Technology, Inc.
4
DS75030A
10/11
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
SST12LP15B-QVCE IC RF PWR AMP 802.11B/G/N 16VQFN
SST13LP05-MLCF IC RF PWR AMP 802.11A/B/G LGA
STD5406NT4G MOSFET N CH 40V 70A DPAK
SUD17N25-165-E3 MOSFET N-CH D-S 250V TO252
SUD19N20-90-T4-E3 MOSFET N-CH D-S 200V TO252
SUD19P06-60L-E3 MOSFET P-CH D-S 60V TO252
SUD23N06-31-T4-GE3 MOSFET N-CH D-S 60V TO252
SUD23N06-31L-E3 MOSFET N-CH D-S 60V TO252
相关代理商/技术参数
SST12LP15-QVCE-K 制造商:SST 制造商全称:Silicon Storage Technology, Inc 功能描述:2.4 GHz High-Power, High-Gain Power Amplifier
SST12LP15-QVC-K 制造商:SST 制造商全称:Silicon Storage Technology, Inc 功能描述:2.4 GHz High-Power, High-Gain Power Amplifier
SST12LP17B-XX8E 功能描述:功率放大器 WLAN 11b/g/n PA (Low Current) RoHS:否 制造商:TriQuint Semiconductor 封装 / 箱体: 工作电源电压:28 V 电源电流:2.5 A 工作温度范围: 封装:
SST12LP17E-QU8E 功能描述:射频放大器 WLAN 11b/g/n Fully-integrated PA RoHS:否 制造商:Skyworks Solutions, Inc. 类型:Low Noise Amplifier 工作频率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 输出截获点:37.5 dBm 功率增益类型:32 dB 噪声系数:0.85 dB 工作电源电压:5 V 电源电流:125 mA 测试频率:2.6 GHz 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:QFN-16 封装:Reel
SST12LP17E-XX8E 功能描述:功率放大器 WLAN 11b/g/n Fully-integrated PA RoHS:否 制造商:TriQuint Semiconductor 封装 / 箱体: 工作电源电压:28 V 电源电流:2.5 A 工作温度范围: 封装:
SST12LP18E 制造商:SST 制造商全称:Silicon Storage Technology, Inc 功能描述:2.4 GHz High-Power, High-Gain Power Amplifier
SST12LP18E-QX8E 功能描述:功率放大器 WLAN 11b/g/n PA (Low Current) RoHS:否 制造商:TriQuint Semiconductor 封装 / 箱体: 工作电源电压:28 V 电源电流:2.5 A 工作温度范围: 封装:
SST12LP19E 制造商:MICROCHIP 制造商全称:Microchip Technology 功能描述:2.4 GHz High-Power, High-Gain Power Amplifier